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1、Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,Introduction of CMP,化學(xué)機械拋光制程簡介,Chemical Mechanical Polishing-CMP),名目,CMP的進(jìn)展史,CMP簡介,為什么要有CMP制程,CMP的應(yīng)用,CMP的耗材,CMP Mirra-Mesa 機臺簡況,Introduction of CMP,CMP 進(jìn)展史,1983:CMP制程由IBM制造。,1986:氧化硅

2、CMP Oxide-CMP開頭試行。,1988:金屬鎢CMPW CMP試行。,1992:CMP 開頭消失在 SIA Roadmap。,1994:臺灣的半導(dǎo)體生產(chǎn)廠第一次開頭將化學(xué)機械研磨應(yīng)用于生產(chǎn)中。,1998:IBM 首次使用銅制程CMP。,Introduction of CMP,CMP,制程的全貌簡介,Introduction of CMP,CMP 機臺的根本構(gòu)造(I),壓力,pressure,平臺,Platform,研磨墊,Pad,芯片,Wafer,研磨液,Slurry,Wafer carrier,終點探測,Endpoint,Detection,鉆石整理器,Diamond Conditi

3、oner,Introduction of CMP,CMP 機臺的根本構(gòu)造(II),Introduction of CMP,Mirra,機臺概貌,Silicon wafer,Diamond disk,Introduction of CMP,Teres,機臺概貌,Introduction of CMP,線性平坦化技術(shù),Introduction of CMP,Introduction of CMP,Teres 研磨均勻性(Non-uniformity)的氣流掌握法,研磨皮帶上的氣孔設(shè)計(,Air-belt design),Introduction of CMP,F-Rex200,機臺概貌,Intro

4、duction of CMP,終點探測圖 STI CMP endpoint profile,光學(xué),摩擦電流,為什么要做化學(xué)機械拋光,Why CMP?,Introduction of CMP,沒有平坦化之前芯片的外表形態(tài),Introduction of CMP,Isolation,0.4,um,0.5,um,IMD,M2,M2,M1,M1,1.2,um,0.7,um,0.3,um,1.0,um,2.2,um,沒有平坦化狀況下的PHOTO,Introduction of CMP,各種不同的平坦化狀況,Introduction of CMP,沒有平坦化之前,平滑化,局部平坦化,全面平坦化,平坦化程度

5、比較,CMP,Resist Etch Back,BPSG Reflow,SOG,SACVD,Dep/Etch,HDP,ECR,0.1,1,10,100,1000,10000,(,Gap fill),Local,Global,平坦化 范圍(微米),Introduction of CMP,Step Height凹凸落差&Local Planarity局部平坦化過程,凹凸落差越來越小,H0=,step height,局部平坦化：凹凸落差消逝,Introduction of CMP,初始形貌對平坦化的影響,A,B,C,A,C,B,RR,Time,Introduction of CMP,CMP,制程的應(yīng)

6、用,CMP,制程的應(yīng)用,前段制程中的應(yīng)用,Shallow trench isolation,(,STI-CMP),后段制程中的應(yīng)用,Pre-meal dielectric planarization(ILD-CMP),Inter-metal dielectric planarization(IMD-CMP),Contact/Via formation(W-CMP),Dual Damascene(Cu-CMP),另外還有,Poly-CMP,RGPO-CMP,等。,Introduction of CMP,STI&Oxide CMP,什么是,STI CMP?,所謂STIShallow Trench

7、Isolation，即淺溝槽隔離技術(shù)，它的作用是用氧化層來隔開各個門電路GATE，使各門電路之間互不導(dǎo)通。STI CMP主要就是將wafer外表的氧化層磨平，最終停在SIN上面。,STI CMP的前一站是CVD區(qū)，后一站是WET區(qū)。,STI,STI,Oxide,SIN,STI,STI,SIN,CMP,前,CMP,后,所謂Oxide CMP包括ILD(Inter-level Dielectric)CMP和IMD(Inter-metal Dielectric)CMP,它主要是磨氧化硅(Oxide),將Oxide磨到肯定的厚度，從而到達(dá)平坦化。,Oxide CMP 的前一站是長Oxide的CVD區(qū)，

8、后一站是Photo區(qū)。,什么是,Oxide CMP?,CMP,前,CMP,后,STI&Oxide CMP,W鎢 CMP流程-1,Ti/TiN PVD,WCMP,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W CVD,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W,W CVD,功能：Glue粘合 and barrier 阻隔layer。以便W得以疊長。,功能：長,W,膜 以便導(dǎo)電用。,POLY CMP,流程,簡介,-2,a,FOX,FOX,Cell,P2,P2,P2,FOX,FOX,Cell,P2,P2,P2,FOX,POLY DEPO,POLY CM

9、P+OVER POLISH,功能：長,POLY,膜以填之。,功能：刨平POLY 膜。END POINT終點探測界限+OVER POLISH多出研磨殘留的POLY膜。,ROUGH POLY CMP,流程-2,b,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,PR COATING,功能：PR 填入糟溝以愛護糟溝內(nèi)的ROUGH POLY。,ROUGH POLY CMP,功能：刨平PR和ROUGH POLY 膜。END POINT終點探測界限+OVER POLI

10、SH多出研磨殘留的ROUGH POLY膜。,CMP,耗材,Introduction of CMP,CMP,耗材的種類,研磨液slurry,研磨時添加的液體狀物體，顆粒大小跟研磨后的刮傷等缺陷有關(guān)。,研磨墊pad,研磨時墊在晶片下面的片狀物。它的使用壽命會影響研磨速率等。,研磨墊整理器condition disk,鉆石盤狀物，整理研磨墊。,Introduction of CMP,CMP,耗材的影響,隨著CMP耗材consumable使用壽命life time的增加，CMP的研磨速率removal rate，研磨均勻度Nu%等參數(shù)都會發(fā)生變化。故要求定時做機臺的MONITOR。,ROUTINE M

11、ONITOR 是用來查看機臺和制程的數(shù)字是否穩(wěn)定，是否在管制的范圍之內(nèi)的一種方法。,Introduction of CMP,CMP Mirra-Mesa,機臺簡況,Introduction of CMP,FABS,MIRRA,MESA,Mirra-Mesa,機臺外觀-側(cè)面,SMIF POD,WET ROBOT,Introduction of CMP,Mirra,(,Mesa),Top view,Mirra-Mesa,機臺外觀-,俯視圖,Introduction of CMP,Mirra-Mesa,機臺-運作過程簡稱,1,2,3,4,5,6,12:FABS 的機器手從cassette 中拿出未加

12、工的WAFER并送到WAFER的暫放臺。,23:Mirra 的機器手接著把WAFER從暫放臺運送到LOADCUP。LOADCUP 是WAFER 上載與卸載的地方。,34:HEAD 將WAFER拿住。CROSS 旋轉(zhuǎn)把HEAD轉(zhuǎn)到PLATEN 1到2到3如此這般挨次般研磨。,43:研磨完畢后，WAFER 將在LOADCUP御載。,35:Mirra 的機器手接著把WAFER從LOADCUP 中拿出并送到MESA清洗。,56:MESA清洗局部有1氨水NH4OH+MEGASONIC超聲波糟 2氨水NH4OH刷。3氫氟酸水HF)刷 4SRD，旋轉(zhuǎn)，烘干部。,61:最終，F(xiàn)ABS 機器手把清洗完的WAFER 送回原本的CASSETTE。加工就這樣完畢了。,HEAD,End,